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Hickman, Austin ; Chaudhuri, Reet ; Moser, Neil ; Elliott, Michael ; Nomoto, Kazuki ; Li, Lei ; Hwang, James C. ; Grace Xing, Huili ; Jena, Debdeep ( , 2021 Device Research Conference (DRC))
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Hickman, Austin Lee ; Chaudhuri, Reet ; Bader, Samuel James ; Nomoto, Kazuki ; Li, Lei ; Hwang, James C. M. ; Grace Xing, Huili ; Jena, Debdeep ( , Semiconductor Science and Technology)
Abstract Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also comes at a point at which the standard GaN heterostructures remain unoptimized for maximum performance. For this reason, we propose the shift to the aluminum nitride (AlN) platform. AlN allows for smarter, highly-scaled heterostructure design that will improve the output power and thermal management of III-nitride amplifiers. Beyond improvements over the incumbent amplifier technology, AlN will allow for a level of integration previously unachievable with GaN electronics. State-of-the-art high-current p-channel FETs, mature filter technology, and advanced waveguides, all monolithically integrated with an AlN/GaN/AlN HEMT, is made possible with AlN. It is on this new AlN platform that nitride electronics may maximize their full high-power, high-speed potential for mm-wave communication and high-power logic applications.
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Vishwanath, Suresh ; Liu, Xinyu ; Rouvimov, Sergei ; Mende, Patrick C. ; Azcatl, Angelica ; McDonnell, Stephen ; Wallace, Robert M. ; Feenstra, Randall M. ; Furdyna, Jacek K. ; Jena, Debdeep ; et al ( , 2D Materials)